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transistorSMT

TPS1120DR

Texas Instruments

-40℃~+150℃ 1.17A 1.5V 15V 180mΩ@10V 2 P-Channel 5.45nC@10V 840mW P-Channel SOIC-8 MOSFETs ROHS

Symbol
S11S23D25D17G12G24D26D18
Footprint
Pad 1 — smd oval 2.036x0.574mm1Pad 2 — smd oval 2.036x0.574mm2Pad 3 — smd oval 2.036x0.574mm3Pad 4 — smd oval 2.036x0.574mm4Pad 8 — smd oval 2.036x0.574mm8Pad 7 — smd oval 2.036x0.574mm7Pad 6 — smd oval 2.036x0.574mm6Pad 5 — smd oval 2.036x0.574mm5
3D Model
.glb.step
Pin Map
PadNameTypeMountShapeW×H
1S1inputSMDoval2.036×0.574
2G1outputSMDoval2.036×0.574
3S2ioSMDoval2.036×0.574
4G2passiveSMDoval2.036×0.574
5D2passiveSMDoval2.036×0.574
6D2passiveSMDoval2.036×0.574
7D1passiveSMDoval2.036×0.574
8D1passiveSMDoval2.036×0.574

Key Parameters

Voltage Rating
15V
Current Rating
1.17A
Power Rating
840mW

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Details

MPNTPS1120DR
ManufacturerTexas Instruments
PackageSOIC-8
FootprintSOP-8_L5.0-W4.0-P1.27-LS6.0-BL
LCSCC44654
Lifecycleactive
MountingSMT
RoHSCompliant
MSLMSL 1
ECCNEAR99

JLCPCB Stock & Pricing

In Stock(10 pcs)
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